Manufacturer Part No:FF400R12KE3
Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:Yes
Brand:Infineon Technologies
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.15 V
Continuous Collector Current at 25 C:580 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:2000 W
Maximum Operating Temperature:+ 125 C
Package / Case:62 mm
Maximum Gate Emitter Voltage:20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
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Address:Room 1402,Building 3,Xin Ji Jia Yuan,SongGang,Baoan Dist Shenzhen , Guangdong ,China
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